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4inch 0.5mm Sapphire Crystal Wafer Single Crystal C-Axis Epi-Ready

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4inch 0.5mm Sapphire Crystal Wafer Single Crystal C-Axis Epi-Ready

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Brand Name : BonTek

Model Number : Sapphire (Al2O3)

Certification : ISO:9001

Place of Origin : China

MOQ : 5 Pieces

Price : Negotiable

Payment Terms : T/T

Supply Ability : 10000 pieces/Month

Delivery Time : 1-4 weeks

Packaging Details : Cassette, Jar, Film package

Material : Sapphire Wafer

Type : Single Crystal

Color : White / Red / Blue

Growth Method : Horizontally Directed Crystallization (HDC)

Surface : Double side polish

VIS range : 85%

Application : Semicondutor Wafer, Led Chip, Optical Glass Window, Electronic Ceramics

Industry : Led,optical Glass,eli-ready Wafer

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Horizontally Directed Crystallization Grown Sapphire Wafer 4inch 0.5mm C-Axis Epi-Ready

Single crystal sapphire Al2O3 possesses a unique combination of excellent optical, physical and chemical properties. The hardest of the oxide crystals, sapphire Al2O3 retains its high strength at high temperatures, has good thermal properties and excellent transparency. Sapphire Al2O3 optics is chemically resistant to many acids and alkalis at temperatures up to 1000 degrees C as well as to HF below 300 degrees C. These properties encourage its wide use of Sapphire Al2O3 optics in hostile environments where optical transmission in the range from the visible to the near infrared is required.

Now the majority of crystals are growing from liquid melt. The most suitable substances to grow crystal from a melt have to melt without decomposition, have no polymorphic transitions and are characterized by low chemical activity. The crystallization process from a melt is applied in the most widespread methods of monocrystalline sapphire growth: namely, the Horizontally Directed Crystallization (HDC) method and Stepanov's method.

4inch 0.5mm Sapphire Crystal Wafer Single Crystal C-Axis Epi-Ready4inch 0.5mm Sapphire Crystal Wafer Single Crystal C-Axis Epi-Ready4inch 0.5mm Sapphire Crystal Wafer Single Crystal C-Axis Epi-Ready

OPTICAL PROPERTIES

Transmission

0.17 to 5.5 um

Refractive Index

1.75449 (o) 1.74663 (e) at 1.06 um

Reflection Loss

at 1.06 microns (2 surfaces) for o-ray - 11.7%; for e-ray - 14.2%

Absorption Index

0.3 x 10-3 cm-1 at 2.4 um

dN/dT

13.7 x 10-6 at 5.4 um

dn/dm = 0

1.5 um

PHYSICAL PROPERTIES

Density

3.97 g/cm3

Melting Point

2040 degrees C

Thermal Conductivity

27.21 W/(m x K) at 300 K

Thermal Expansion

5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K

Hardness

Knoop 2000 kg/mm 2 with 2000g indenter

Specific Heat Capacity

419 J/(kg x K)

Dielectric Constant

11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz

Young's Modulus (E)

335 GPa

Shear Modulus (G)

148.1 GPa

Bulk Modulus (K)

240 GPa

Elastic Coefficients

C11=496 C12=164 C13=115
C33=498 C44=148

Apparent Elastic Limit

275 MPa (40,000 psi)

Poisson Ratio

0.25

4inch 0.5mm Sapphire Crystal Wafer Single Crystal C-Axis Epi-Ready

Acceptance Check

4inch 0.5mm Sapphire Crystal Wafer Single Crystal C-Axis Epi-Ready

1. The product is fragile. We have adequately packed it and labeled it fragile. We deliver through excellent domestic and international express companies to ensure transportation quality.

2. After receiving the goods, please handle with care and check whether the outer carton is in good condition. Carefully open the outer carton and check whether the packing boxes are in alignment. Take a picture before you take them out.

3. Please open the vacuum package in a clean room when the products are to be applied.

4. If the products are found damaged during courier, please take a picture or record a video immediately. DO NOT take the damaged products out of the packaging box! Contact us immediately and we will solve the problem well.


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