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Hangzhou Freqcontrol Electronic Technology Ltd.
Hangzhou Freqcontrol Electronic Technology Ltd. We Grow Crystal. We Fabricate Wafer. We are Piezoelectric Specialist.
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1'' To 8'' Sapphire Wafer For High-Frequency High-Power High-Temperature Devices

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1'' To 8'' Sapphire Wafer For High-Frequency High-Power High-Temperature Devices

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Brand Name : BonTek

Model Number : Sapphire (Al2O3)

Certification : ISO:9001

Place of Origin : China

MOQ : 5 Pieces

Price : Negotiable

Payment Terms : T/T

Supply Ability : 10000 pieces/Month

Delivery Time : 1-4 weeks

Packaging Details : Cassette, Jar, Film package

Material : Sapphire Wafer

Orientation : C-axis [0001], R-axis [1-102], A-axis [11-20], M-axis [10-10]

Diameter : Φ1inch to 8inch

Refractive Index : 1.75449 (o) 1.74663 (e) at 1.06 microns

Reflection Loss : at 1.06 microns (2 surfaces) for o-ray - 11.7%; for e-ray - 14.2%

Index of Absorption : 0.3 x 10-3 cm-1 at 2.4 microns

Specific Heat Capacity : 419 J/(kg x K)

Dielectric Constant : 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz

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Φ1'' to 8'' Sapphire Wafer for High-Frequency High-Power High-Temperature Devices

Comparing to other wafers, the sapphire wafer has many unique features such as high strength, anti-corrosion, anti-abrasion, good thermal conductivity, and good electrical isolation. Due to its excellent mechanical and chemical characteristics, the sapphire wafer plays an important role in the optoelectronics industry and widely used in precision mechanical parts and vacuum equipment.

Applications of Sapphire Wafer

- High-frequency device
- High power device
- GaN epitaxy device
- High-temperature device
- Optoelectronic device
- Light-emitting diode

1'' To 8'' Sapphire Wafer For High-Frequency High-Power High-Temperature Devices1'' To 8'' Sapphire Wafer For High-Frequency High-Power High-Temperature Devices1'' To 8'' Sapphire Wafer For High-Frequency High-Power High-Temperature Devices

Growth

Kyroplous

Diameter

Ø 1" / Ø 2" / Ø 3" / Ø 4"/ Ø 5"

Size

10 x 10 / 20 x 20 / 50 x 50 / 100 x 100 mm

Thickness

0.43 mm / 0.5 mm / 1 mm

Surface

one side / two sides epi polished

Roughness

Ra ≤ 5 A

Package

Single wafer container or Ampak cassette

Chemical formula

Al2O3

Crystal structure

Hexagonal

Lattice constant

4.77 A

Hardness

9

Thermal conductivity

46 W / mk

Dielectric constant

11.58

Refractive index

1.768


1'' To 8'' Sapphire Wafer For High-Frequency High-Power High-Temperature Devices

Acceptance Check

1'' To 8'' Sapphire Wafer For High-Frequency High-Power High-Temperature Devices

1. The product is fragile. We have adequately packed it and labeled it fragile. We deliver through excellent domestic and international express companies to ensure transportation quality.

2. After receiving the goods, please handle with care and check whether the outer carton is in good condition. Carefully open the outer carton and check whether the packing boxes are in alignment. Take a picture before you take them out.

3. Please open the vacuum package in a clean room when the products are to be applied.

4. If the products are found damaged during courier, please take a picture or record a video immediately. DO NOT take the damaged products out of the packaging box! Contact us immediately and we will solve the problem well.


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8'' Sapphire Wafer

      

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