Stepanov's Method Grown Sapphire Wafer 2Inch 3inch 4inch 6inch R-Axis M-plane

Stepanov's Method Grown Sapphire Wafer 2Inch 3inch 4inch 6inch R-Axis M-plane

Stepanov's method is used for growth of monocrystal sapphire details of various configurations, including sapphire rods, pipes and tapes.

The method of Horizontally Directed Crystallization is widely used in the synthesis of large sapphire monocrystals. The elements of the directed crystallization and zonal melting are successfully combined in the Gorizontally Directed Crystallization (HDC) method. The crystal grows at slow movement of the local melted zone along the container with the furnace charge, having a boat form. The Horizontal Directed Crystallization method provides receiving of monocrystalline sapphire with small sizes dispersion of cross section and allows to grow up sapphire monocrystal of any crystallographic orientation in the form of plates of the record sizes unattainable at use of other growth methods.

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Stepanov's Sapphire Wafer

HDC 3 inch Wafer

Sapphire Wafer 2Inch

Stepanov's Method Grown Sapphire Wafer 2Inch 3inch 4inch 6inch R-Axis M-plane Images