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High Speed Modulation And Wide Bandwidth Piezoelectric Wafer With LNOI POI

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High Speed Modulation And Wide Bandwidth Piezoelectric Wafer With LNOI POI

Brand Name : BonTek

Model Number : LNOI Wafer

Certification : ISO:9001, ISO:14001

Place of Origin : China

MOQ : 25 pcs

Price : $2000/pc

Payment Terms : T/T

Supply Ability : 1000 pcs/Month

Delivery Time : 1-4 weeks

Packaging Details : Cassette/ Jar package, vaccum sealed

Product : Piezo On Insulation

Diameter : 4 inch, 6 inch

Top Layer : Lithium Niobate

Top Thickness : 300~600nm

Insolation : SiO2 Thermal Oxide

Insolation Thickness : 2000±15nm; 3000±50nm; 4700±100nm

Substrate : Silicon

Application : Optical Waveguides and Microwaveguides

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Enabling High-Speed Modulation And Wide Bandwidth With LNOI POI

Piezo on Insulation (POI) refers to a technology where piezoelectric materials are integrated onto an insulating substrate. This allows for the utilization of the piezoelectric effect while providing electrical isolation. The POI technology enables the development of various devices and systems that harness the unique properties of piezoelectric materials for sensing, actuation, and energy harvesting applications.

POI (Piezo on Insulation) technology finds various applications in different fields due to its ability to combine the advantages of piezoelectric materials with electrical isolation. Such as sensors, Microelectromechanical Systems and Energy Storage and Generation.

The versatility of integrating piezoelectric materials onto an insulating substrate opens up possibilities for innovative solutions in diverse fields, including electronics, energy, healthcare, and more.

LNOI Wafer
Structure LN / SiO2 / Si LTV / PLTV < 1.5 μm ( 5∗ 5 mm2 ) / 95%
Diameter Φ100 ± 0.2 mm Edge Exclution 5 mm
Thickness 500 ± 20 μm Bow Within 50 μm
Primary Flat Length 47.5 ± 2 mm
57.5 ± 2 mm		 Edge Trimming 2 ± 0.5 mm
Wafer Beveling R Type Environmental Rohs 2.0
Top LN Layer
Average Thickness 400/600±10 nm Uniformity < 40nm @17 Points
Refraction index no > 2.2800, ne < 2.2100 @ 633 nm Orientation X axis ± 0.3°
Grade Optical Surface Ra < 0.5 nm
Defects >1mm None;
≦1 mm Within 300 total		 Delamination None
Scratch >1cm None;
≦1cm Within 3		 Primary Flat Perpendicular to +Y Axis ± 1°
Isolation SiO2 Layer
Average Thickness 2000nm ± 15nm 3000nm ± 50nm 4700nm ± 100nm Uniformity < ±1% @17 Points
Fab. Method Thermal Oxide Refraction index 1.45-1.47 @ 633 nm
Substrate
Material Si Orientation <100> ± 1°
Primary Flat Orientation <110> ± 1° Resistivity > 10 kΩ·cm
Backside Contamination No visible stain Backside Etch

High Speed Modulation And Wide Bandwidth Piezoelectric Wafer With LNOI POIHigh Speed Modulation And Wide Bandwidth Piezoelectric Wafer With LNOI POI


High Speed Modulation And Wide Bandwidth Piezoelectric Wafer With LNOI POI

High Speed Modulation And Wide Bandwidth Piezoelectric Wafer With LNOI POI


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High Speed Modulation Piezoelectric Wafer

      

Wide Bandwidth Piezoelectric Wafer

      

LNOI POI Piezoelectric Wafer

      
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