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Phi 2'' To 8'' Thermal Oxide Silicon Wafer N-Type P-Type With An Insulating Oxide Layer

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Phi 2'' To 8'' Thermal Oxide Silicon Wafer N-Type P-Type With An Insulating Oxide Layer

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Brand Name : BonTek

Model Number : Silicon Wafer

Certification : ISO:9001, ISO:14001

Place of Origin : China

MOQ : 25 Pieces

Price : Negotiable

Payment Terms : T/T

Supply Ability : 100000 Pieces/Month

Delivery Time : 1 - 4 weeks

Packaging Details : Cassette / Jar, put in a carton with PE foam.

Material : Silicon Wafer

Surface : Double Side Polish, Single Side Polish, Lap

Diameter : 2'' - 12'' or as required

Thickness : 0.05mm - 10mm

Orientation : <100>, <111>, <110>

Resistivity : 0.001 – 300 ohm/cm

Type : P type, N type, Intrinsic

Dopant : B, Ph, As or Undoped

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Phi 2'' to 8'' Thermal Oxide Silicon Wafer N-Type P-Type With an Insulating Oxide Layer

BonTek provides high quality silicon thermal oxide wafers in all diameters from 2″ to 300mm. We ensure your specific requirements are met by choosing prime grade and defecting free silicon wafer as a substrate so that a high uniform layer of thermal oxide is formed in a furnace.

In micro-technology, the main insulating material used is Silicon dioxide which in chemical symbols is written as SiO2. In order to produce an insulating oxide layer, thermal oxidation, which is the most common technique used to obtain the layer is used. The process of obtaining the layer is performed in a furnace.

Phi 2'' To 8'' Thermal Oxide Silicon Wafer N-Type P-Type With An Insulating Oxide LayerPhi 2'' To 8'' Thermal Oxide Silicon Wafer N-Type P-Type With An Insulating Oxide LayerPhi 2'' To 8'' Thermal Oxide Silicon Wafer N-Type P-Type With An Insulating Oxide Layer

Thermal Oxide On Both Sides Of Wafer

Film thickness: 100Å – 10µm on both sides
Film thickness Tolerance: Target ±5%
Film stress: - 320±50 MPa Compressive

Thermal Oxide On Single Side Of Wafer

Film thickness: 100Å – 10,000Å on both sides
Film thickness Tolerance: Target ±5%
Film stress: -320±50 MPa Compressive

SEMI Standard

2" (50.8mm)

3" (76.2mm)

4" (100mm)

5" (125mm)

6" (150mm)

8" (200mm)

12" (300mm)

Diameter

 50.8 ± 0.38mm 76.2 ± 0.63mm 100 ± 0.5mm 125 ± 0.5mm 150 ± 0.2mm 200 ± 0.2mm 300 ± 0.2mm

Thickness

 279 ± 25µm 381 ± 25µm 525 ± 20 µm or
625 ± 20µm		 625 ± 20µm 675 ± 20µm or
625 ± 15µm		 725 ± 20µm 775 ± 20µm

Type

P, N or Intrinsic

Dopant

B, Ph, As or Undoped

Orientation

<100>, <111>, <110>

Rsistivity

0.001 – 300 ohm/cm

Primary Flat Length

 15.88 ± 1.65mm 22.22 ± 3.17mm 32.5 ± 2.5mm 42.5 ± 2.5mm 57.5 ± 2.5mm Notch Notch

Secondary Flat Length

 8 ± 1.65mm 11.18 ± 1.52mm 18 ± 2.0mm 27.5 ± 2.5mm 37.5 ± 2.5mm NA NA

Surface Finish

 SSP, DSP, Etched, or Lapped

Phi 2'' To 8'' Thermal Oxide Silicon Wafer N-Type P-Type With An Insulating Oxide Layer

Acceptance Check

Phi 2'' To 8'' Thermal Oxide Silicon Wafer N-Type P-Type With An Insulating Oxide Layer

1. The product is fragile. We have adequately packed it and labeled it fragile. We deliver through excellent domestic and international express companies to ensure transportation quality.

2. After receiving the goods, please handle with care and check whether the outer carton is in good condition. Carefully open the outer carton and check whether the packing boxes are in alignment. Take a picture before you take them out.

3. Please open the vacuum package in a clean room when the products are to be applied.

4. If the products are found damaged during courier, please take a picture or record a video immediately. DO NOT take the damaged products out of the packaging box! Contact us immediately and we will solve the problem well.


Product Tags:

Phi 8'' Silicon Wafer

      

N-Type Polished Wafer

      

2'' P-Type Silicon Wafer

      
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