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Boron Doped Phosphorus Doped Silicon Wafer With High Resistivity For Semiconductor

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Boron Doped Phosphorus Doped Silicon Wafer With High Resistivity For Semiconductor

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Brand Name : BonTek

Model Number : Silicon Wafer

Certification : ISO:9001, ISO:14001

Place of Origin : China

MOQ : 25 Pieces

Price : Negotiable

Payment Terms : T/T

Supply Ability : 100000 Pieces/Month

Delivery Time : 1 - 4 weeks

Packaging Details : Cassette / Jar, put in a carton with PE foam.

Material : Silicon Wafer

Surface : Double Side Polish, Single Side Polish, Lap

Diameter : 2'' - 12'' or as required

Thickness : 0.05mm - 10mm

Orientation : <100>, <111>, <110>

Resistivity : 0.001 – 300 ohm/cm

Type : P type, N type, Intrinsic

Dopant : B, Ph, As or Undoped

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Boron Doped Phosphorus Doped Silicon Wafer With High Resistivity For Semiconductor

Silicon wafers are thin slices of pure crystalized silicon. These pure forms of wafers are normally called undoped or intrinsic silicon wafer. One of the reasons for using Silicon wafer in semiconductor industry is the natural abundance of Silicon. It is one of the most abundant material found on earth usually found in the form of SiO2. Another reason of using silicon is that electrical characteristics of the silicon can be precisely controlled by addition of dopants. Silicon wafers that are doped with impurities such as Boron create P- type wafers and wafers that are doped with Arsenic or Phosphorous create N-type wafers. The P type wafers have several positive charged holes whereas N type wafers have several negative charged electrons in it.

Boron Doped Phosphorus Doped Silicon Wafer With High Resistivity For SemiconductorBoron Doped Phosphorus Doped Silicon Wafer With High Resistivity For SemiconductorBoron Doped Phosphorus Doped Silicon Wafer With High Resistivity For Semiconductor

SEMI Standard

2" (50.8mm)

3" (76.2mm)

4" (100mm)

5" (125mm)

6" (150mm)

8" (200mm)

12" (300mm)

Diameter

50.8 ± 0.38mm 76.2 ± 0.63mm 100 ± 0.5mm 125 ± 0.5mm 150 ± 0.2mm 200 ± 0.2mm 300 ± 0.2mm

Thickness

279 ± 25µm 381 ± 25µm 525 ± 20 µm or
625 ± 20µm
625 ± 20µm 675 ± 20µm or
625 ± 15µm
725 ± 20µm 775 ± 20µm

Type

P, N or Intrinsic

Dopant

B, Ph, As or Undoped

Orientation

<100>, <111>, <110>

Rsistivity

0.001 – 300 ohm/cm

Primary Flat Length

15.88 ± 1.65mm 22.22 ± 3.17mm 32.5 ± 2.5mm 42.5 ± 2.5mm 57.5 ± 2.5mm Notch Notch

Secondary Flat Length

8 ± 1.65mm 11.18 ± 1.52mm 18 ± 2.0mm 27.5 ± 2.5mm 37.5 ± 2.5mm NA NA

Surface Finish

SSP, DSP, Etched, or Lapped

Boron Doped Phosphorus Doped Silicon Wafer With High Resistivity For Semiconductor

Acceptance Check

Boron Doped Phosphorus Doped Silicon Wafer With High Resistivity For Semiconductor

1. The product is fragile. We have adequately packed it and labeled it fragile. We deliver through excellent domestic and international express companies to ensure transportation quality.

2. After receiving the goods, please handle with care and check whether the outer carton is in good condition. Carefully open the outer carton and check whether the packing boxes are in alignment. Take a picture before you take them out.

3. Please open the vacuum package in a clean room when the products are to be applied.

4. If the products are found damaged during courier, please take a picture or record a video immediately. DO NOT take the damaged products out of the packaging box! Contact us immediately and we will solve the problem well.


Product Tags:

Phosphorus Doped Silicon Wafer

      

Boron Doped Semiconductor Wafer

      

High Resistivity Silicon Wafer

      
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